IPB107N20NA ipp110n20na opti mos tm 3 power-transistor features ? n-channel, normal level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 175 c operating temperature ? pb-free lead plating; rohs compliant ? qualified according to aec q101 ? halogen-free according to iec61249-2-21 ? ideal for high-frequency switching and synchronous rectification maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25?c 88 a t c =100?c 63 pulsed drain current 1) i d,pulse t c =25?c 352 avalanche energy, single pulse e as i d =80?a, r gs =25? w 560 mj reverse diode d v /d t d v /d t 10 kv/s gate source voltage v gs 20 v power dissipation p tot t c =25?c 300 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 value 1) see figure 3 v ds 200 v r ds(on),max (to263) 10.7 m w i d 88 a product summary type IPB107N20NA ipp110n20na package pg - to263 - 3 pg - to220 - 3 marking 107n20na 110n20na rev. 2.1 page 1 2011-05-11
IPB107N20NA ipp110n20na parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.5 k/w r thja minimal footprint - - 62 6 cm2 cooling area 2) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0?v, i d =1?ma 200 - - v gate threshold voltage v gs(th) v ds = v gs , i d =270?a 2 3 4 zero gate voltage drain current i dss v ds =160?v, v gs =0?v, t j =25?c - 0.1 1 a v ds =160?v, v gs =0?v, t j =125?c - 10 100 gate-source leakage current i gss v gs =20?v, v ds =0?v - 1 100 na drain-source on-state resistance r ds(on) v gs =10?v, i d =88?a, (to220) - 9.9 11 m w v gs =10?v, i d =88?a, (to263) - 9.6 10.7 values thermal resistance, junction - ambient 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 2.1 page 2 2011-05-11
IPB107N20NA ipp110n20na parameter symbol conditions unit min. typ. max. dynamic characteristic 4) input capacitance c iss - 5340 7100 pf output capacitance c oss - 401 533 reverse transfer capacitance c rss - 5 - turn-on delay time t d(on) - 18 - ns rise time t r - 26 - turn-off delay time t d(off) - 41 - fall time t f - 11 - gate charge characteristics 3) gate to source charge q gs - 23 - nc gate to drain charge q gd - 8 - switching charge q sw - 15 - gate charge total q g - 65 87 gate plateau voltage v plateau - 4.4 - v output charge q oss v dd =100?v, v gs =0?v - 162 216 nc reverse diode 4) diode continous forward current i s - - 88 a diode pulse current i s,pulse - - 352 diode forward voltage v sd v gs =0?v, i f =88?a, t j =25?c - 1 1.2 v reverse recovery time t rr - 142 ns reverse recovery charge q rr - 640 - nc 3) see figure 16 for gate charge parameter definition 4) not subjected to production test - verified by design/characterization v r =100?v, i f =44 a, d i f /d t =100?a/s t c =25?c values v gs =0?v, v ds =100?v, f =1?mhz v dd =100?v, v gs =10?v, i d =44?a, r g =1.6? w v dd =100?v, i d =44?a, v gs =0?to?10?v rev. 2.1 page 3 2011-05-11
IPB107N20NA ipp110n20na 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 - 2 10 - 1 10 0 z thjc [k/w] t p [s] 0 40 80 120 160 200 240 280 320 0 50 100 150 200 p tot [w] t c [ c] 0 20 40 60 80 100 0 50 100 150 200 i d [a] t c [ c] 1 s 10 s 100 s 1 ms 10 ms dc 10 - 1 10 0 10 1 10 2 10 3 10 - 1 10 0 10 1 10 2 10 3 i d [a] v ds [v] rev. 2.1 page 4 2011-05-11
IPB107N20NA ipp110n20na 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 4.5 v 5 v 7 v 10 v 0 5 10 15 20 0 20 40 60 80 100 120 140 r ds(on) [m w ] i d [a] 25 c 175 c 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 i d [a] v gs [v] 0 20 40 60 80 100 120 140 160 180 0 25 50 75 100 125 150 g fs [s] i d [a] 4.5 v 5 v 7 v 10 v 0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 i d [a] v ds [v] rev. 2.1 page 5 2011-05-11
IPB107N20NA ipp110n20na 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =88 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 0 5 10 15 20 25 30 35 - 60 - 20 20 60 100 140 180 r ds(on) [m w ] t j [ c] 270 a 2700 a 0 0.5 1 1.5 2 2.5 3 3.5 4 - 60 - 20 20 60 100 140 180 v gs(th) [v] t j [ c] ciss coss crss 10 1 10 2 10 3 10 4 0 40 80 120 160 c [pf] v ds [v] 25 c 175 c 10 0 10 1 10 2 10 3 0 0.5 1 1.5 2 i f [a] v sd [v] rev. 2.1 page 6 2011-05-11
IPB107N20NA ipp110n20na 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 w v gs =f( q gate ); i d =44 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 40 v 100 v 160 v 0 2 4 6 8 10 0 20 40 60 80 v gs [v] q gate [nc] 180 190 200 210 220 230 - 60 - 20 20 60 100 140 180 v br(dss) [v] t j [ c] 25 c 100 c 125 c 1 10 100 1 10 100 1000 i as [a] t av [s] rev. 2.1 page 7 2011-05-11 v gs q gate v gs(th) q g(th) q gs q gd q sw q g
IPB107N20NA ipp110n20na pg-to220-3: outline rev. 2.1 page 8 2011-05-11
IPB107N20NA ipp110n20na pg-to263-3: outline rev. 2.1 page 9 2011-05-11
IPB107N20NA ipp110n20na published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.1 page 10 2011-05-11
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